Insulated gate bipolar transistor

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71Microsoft Word - MS  AN_from DemoBoard tests_rev1.7.3.doc

Microsoft Word - MS AN_from DemoBoard tests_rev1.7.3.doc

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Source URL: www.irf.com

Language: English - Date: 2012-08-10 14:10:20
72Microsoft Word - DB_00003_BG1A.doc

Microsoft Word - DB_00003_BG1A.doc

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Source URL: www.pwrx.com

Language: English - Date: 2011-05-25 10:45:05
73
  Order this document by AN1689/D  SEMICONDUCTOR APPLICATION NOTE

  Order this document by AN1689/D SEMICONDUCTOR APPLICATION NOTE

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Source URL: www.intusoft.com

Language: English - Date: 2011-03-23 12:48:15
74Insulated Gate Bipolar Transistor Market: Global Industry Analysis, Market Size, Share, Growth and Forecast[removed]Transparency Market Research has added a new report titled,

Insulated Gate Bipolar Transistor Market: Global Industry Analysis, Market Size, Share, Growth and Forecast[removed]Transparency Market Research has added a new report titled, "Insulated Gate Bipolar Transistor Marke

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Source URL: www.prweb.com

Language: English - Date: 2014-07-21 14:00:11
75© 2013 IEEE  Proceedings of the IEEE Energy Conversion Congress and Exposition (ECCE USA 2013), Denver, Colorado, USA, September 15-19, [removed]Comparative Evaluation of T-Type Topologies Comprising Standard and Reverse-

© 2013 IEEE Proceedings of the IEEE Energy Conversion Congress and Exposition (ECCE USA 2013), Denver, Colorado, USA, September 15-19, [removed]Comparative Evaluation of T-Type Topologies Comprising Standard and Reverse-

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Source URL: www.pes.ee.ethz.ch

Language: English - Date: 2014-01-07 06:08:27
76© 2013 IEEE  Proceedings of the 14th IEEE Workshop on Control and Modeling for Power Electronics (COMPEL 2013), Salt Lake City, USA, June 23-26, 2013	  Closed-Loop di/dt & dv/dt Control and Dead Time Minimization of IGB

© 2013 IEEE Proceedings of the 14th IEEE Workshop on Control and Modeling for Power Electronics (COMPEL 2013), Salt Lake City, USA, June 23-26, 2013 Closed-Loop di/dt & dv/dt Control and Dead Time Minimization of IGB

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Source URL: www.pes.ee.ethz.ch

Language: English - Date: 2014-01-07 05:56:04
77© 2013 IEEE  Proceedings of the 14th IEEE Workshop on Control and Modeling for Power Electronics (COMPEL 2013), Salt Lake City, USA, June 23-26, 2013.	  Mixed MOSFET-IGBT Bridge for High-Efficient Medium-Frequency Dual-

© 2013 IEEE Proceedings of the 14th IEEE Workshop on Control and Modeling for Power Electronics (COMPEL 2013), Salt Lake City, USA, June 23-26, 2013. Mixed MOSFET-IGBT Bridge for High-Efficient Medium-Frequency Dual-

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Source URL: www.pes.ee.ethz.ch

Language: English - Date: 2014-01-07 05:50:19
78Chapter 1 B. Jayant Baliga Power Semiconductor Devices for Variable Frequency Drives

Chapter 1 B. Jayant Baliga Power Semiconductor Devices for Variable Frequency Drives

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Source URL: media.wiley.com

Language: English - Date: 2009-11-02 04:07:24
79Ttitle, Title, Title, Ttitle, Title, Title, Ttitle, Title, Title

Ttitle, Title, Title, Ttitle, Title, Title, Ttitle, Title, Title

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Source URL: www.lem.com

Language: English - Date: 2012-05-16 05:57:02
80Senior Sales Engineer – High Power Conversion Systems Position Responsible for the sale of high power AC & DC power conversion systems ranging in size from 500kw to 50MW. These systems include Thyristor, IGBT Switching

Senior Sales Engineer – High Power Conversion Systems Position Responsible for the sale of high power AC & DC power conversion systems ranging in size from 500kw to 50MW. These systems include Thyristor, IGBT Switching

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Source URL: www.dynapower.com

Language: English - Date: 2014-10-01 17:13:47